, u na.. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJ13334 description ? collector-emitter sustaining voltage- : vceo(sus) = 450v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switchmode applications. ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25"c) symbol vcev vceo vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25'c junction temperature storage temperature value 750 450 6 20 30 10 15 175 200 -65-200 unit v v v a a a a w ?c ?c thermal characteristics symbol rttl j-c parameter thermal resistance, junction to case max 1.0 unit c/w ?-tj pin i.base i. bylltter 3. collect or (case) to-3 package l r l it -n-1 1 t 1 ? , c t~ -*iu? d 2 pl h? u? *t v-. p-l-^ a \l / j t ? ^_ t tl ^ vj ^x 'u dm a b c d e g k ^ l n 4 u v p c 1 13b nun mm max 3900 25.30 9.30 090 1 2.90 26.67 11.10 1.10 3.10 f 10.92 546 11.40 1675 19.40 4.00 30.00 4.30 13.50 17.05 1962 420 30.20 450 : ct t b i nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJ13334 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vc(sat)-1 vce(sat)-2 ve(sat) icev icer iebo hfe fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product output capacitance conditions lc=100ma; ib=0 lc= 10a; ib=2a lc=10a;lb=2a,tc=100'c lc= 20a; ib=6.7a lc= 10a; ib=2a lc=10a;lb=2a,tc=100-c vcev=450v;vbe(off)=1.5v vcev=450v;vbe(off)=1 .5v;tc=150'c vce= 450v; rbe= 50 q ,tc= 1 00"c veb= 6v; lc=0 lc= 5a ; vce= 5v lc= 0.3a ;vge= 10v; ftest=1mhz le=0;vcb=10v;ftest=1khz min 450 10 5 125 typ. max 1.8 2.4 5 1.8 1.8 0.25 5.0 5.0 1 60 40 500 unit v v v v ma ma ma mhz pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc=10a, vcc=250v; ib1=2a duty cycless2.0% 0.02 0.3 1.6 0.3 0.1 0.7 4.0 0.7 u s l-i s v s \i s
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